WST4041 P-Channel -40V -6A SOT-23-3L WINSOK MOSFET
Allgemeng Beschreiwung
De WST4041 ass e mächtege P-Kanal MOSFET entworf fir ze benotzen an synchron Buck Konverter.Et huet eng héich Zell Dicht datt fir excellent RDSON a Gate charge erlaabt.De WST4041 entsprécht Ufuerderunge fir RoHS a Green Product Standards, an et kënnt mat enger 100% EAS Garantie fir zouverlässeg Leeschtung.
Eegeschaften
Fortgeschratt Trench Technologie weist héich Zelldicht a super niddereg Paartladung, reduzéiert den CdV / dt Effekt wesentlech.Eis Apparater kommen mat enger 100% EAS Garantie an ëmweltfrëndlech Optiounen.
Uwendungen
Héichfrequenz Point-of-Laascht Synchron-Buck-Konverter, Netzwierk DC-DC Kraaftsystem, Laaschtschalter, E-Zigaretten, Controller, Digital Geräter, kleng Hausgeräter a Konsumentelektronik.
entspriechend Material Zuel
AOS AO3409 AOS3403 AOS3421 AOS3421E AO3401 AOS3401A,dintek DTS4501,ncepower NCE40P05Y,
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | -40 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@TC=25℃ | Kontinuéierlech Drain aktuell, VGS @ -10V1 | -6,0 | A |
| ID@TC=100℃ | Kontinuéierlech Drain aktuell, VGS @ -10V1 | -4.5 | A |
| IDM | Pulséiert Drain Stroum 2 | -24 | A |
| EAS | Single Pulse Avalanche Energy3 | 12 | mJ |
| IAS | Avalanche Aktuell | -7 | A |
| PD@TC=25℃ | Total Power Dissipation 4 | 1.4 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = -1mA | --- | -0,03 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=-10V, ID=-3A | --- | 30 | 40 | mΩ |
| VGS=-4.5V, ID=-1A | --- | 40 | 58 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =-250uA | -0,8 | -1.2 | -2.2 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | 4,56 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=-28V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-28V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-3A | --- | 15 | --- | S |
| Rg | Gate Resistenz | VDS=0V, VGS=0V, f=1MHz | --- | 3.8 | --- | Ω |
| Qg | Total Gate Charge (-4.5V) | VDS=-18V, VGS=-10V, ID=-4A | --- | 9.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.7 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.0 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A, RL=15Ω | --- | 8 | --- | ns |
| Tr | Rise Time | --- | 10 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 18 | --- | ||
| Tf | Hierscht Zäit | --- | 8 | --- | ||
| Ciss | Input Kapazitéit | VDS=-15V, VGS=0V, f=1MHz | --- | 420 | --- | pF |
| Coss | Output Kapazitéit | --- | 77 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 55 | --- |
