WST2011 Dual P-Channel -20V -3.2A SOT-23-6L WINSOK MOSFET
Allgemeng Beschreiwung
D'WST2011 MOSFETs sinn déi fortgeschratt P-ch Transistoren verfügbar, mat oniwwertraff Zelldicht.Si bidden aussergewéinlech Leeschtung, mat niddereg RDSON a Gate charge, mécht se ideal fir kleng Muecht schalt a Luede schalt Uwendungen.Ausserdeem entsprécht de WST2011 RoHS a Green Product Standards a bitt voll Funktioun Zouverlässegkeet Genehmegung.
Eegeschaften
Fortgeschratt Trench Technologie erlaabt eng méi héich Zell Dicht, doraus zu engem Green Apparat mat Super Low Gate Charge an excellent CdV / dt Effekt Réckgang.
Uwendungen
Héichfrequenz Point-of-Laascht Synchron-Klengkraaftschaltung ass gëeegent fir ze benotzen an MB/NB/UMPC/VGA, Netzwierker DC-DC Kraaftsystemer, Lastschalter, E-Zigaretten, Controller, Digital Produkter, kleng Haushaltsapparater a Konsumentelektronik .
entspriechend Material Zuel
OP FDC634P,VISHAY Si3443DDV,NXP PMDT670UPE,
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten | |
| 10s | Steady Staat | |||
| VDS | Drain-Source Volt | -20 | V | |
| VGS | Gate-Source Volt | ± 12 | V | |
| ID@TA=25℃ | Kontinuéierlech Drain aktuell, VGS @ -4.5V1 | -3.6 | -3.2 | A |
| ID@TA=70℃ | Kontinuéierlech Drain aktuell, VGS @ -4.5V1 | -2.6 | -2.4 | A |
| IDM | Pulséiert Drain Stroum 2 | -12 | A | |
| PD@TA=25℃ | Total Power Dissipation 3 | 1.7 | 1.4 | W |
| PD@TA=70℃ | Total Power Dissipation 3 | 1.2 | 0.9 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ | |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ | |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = -1mA | --- | -0.011 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=-4.5V, ID=-2A | --- | 80 | 85 | mΩ |
| VGS=-2.5V, ID=-1A | --- | 95 | 115 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =-250uA | -0,5 | -1.0 | -1.5 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | 3,95 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=-16V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-16V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-2A | --- | 8.5 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V, VGS=-4,5V, ID=-2A | --- | 3.3 | 11.3 | nC |
| Qgs | Gate-Source Charge | --- | 1.1 | 1.7 | ||
| Qgd | Gate-Drain Charge | --- | 1.1 | 2.9 | ||
| Td (an) | Turn-On Delay Time | VDD=-15V, VGS=-4,5V, RG=3.3Ω, ID=-2A | --- | 7.2 | --- | ns |
| Tr | Rise Time | --- | 9.3 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 15.4 | --- | ||
| Tf | Hierscht Zäit | --- | 3.6 | --- | ||
| Ciss | Input Kapazitéit | VDS=-15V, VGS=0V, f=1MHz | --- | 750 | --- | pF |
| Coss | Output Kapazitéit | --- | 95 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 68 | --- |
