WSP4447 P-Channel -40V -11A SOP-8 WINSOK MOSFET
Allgemeng Beschreiwung
De WSP4447 ass en top performant MOSFET deen Trenchtechnologie benotzt an eng héich Zelldicht huet. Et bitt exzellent RDSON a Gate Charge, sou datt et gëeegent ass fir an de meeschte Synchron-Buck Converter Uwendungen ze benotzen. De WSP4447 entsprécht RoHS a Green Product Standards, a kënnt mat 100% EAS Garantie fir voll Zouverlässegkeet.
Fonctiounen
Fortgeschratt Trench Technologie erlaabt fir méi héich Zell Dicht, doraus zu engem Green Apparat mat Super Low Gate Charge an excellent CdV / dt Effekt Réckgang.
Uwendungen
Héichfrequenz Konverter fir eng Vielfalt vun Elektronik
Dëse Konverter ass entworf fir effizient eng breet Palette vun Apparater ze kreéieren, dorënner Laptops, Spillkonsolen, Netzwierkausrüstung, E-Zigaretten, drahtlose Ladegeräter, Motoren, Dronen, medizinesch Geräter, Autosladere, Controller, Digital Produkter, kleng Hausgeräter a Konsument. elektronesch.
entspriechend Material Zuel
AOS AO4425 AO4485,ON FDS4675,VISHAY Si4401FDY,ST STS10P4LLF6,TOSHIBA TPC8133,PANJIT PJL9421，Sinopower SM4403PSK，RUICHIPS RU40L10H.
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | -40 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@TA=25℃ | Kontinuéierlech Drain aktuell, VGS @ -10V1 | -11 | A |
| ID@TA=70℃ | Kontinuéierlech Drain aktuell, VGS @ -10V1 | -9,0 | A |
| IDM a | 300µs Pulséiert Drain Stroum (VGS=-10V) | -44 | A |
| EAS b | Avalanche Energie, Eenzelpuls (L=0,1mH) | 54 | mJ |
| IAS b | Lawinestroum, Eenzelpuls (L=0,1mH) | -33 | A |
| PD@TA=25℃ | Total Power Dissipation 4 | 2.0 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = -1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=-10V, ID=-13A | --- | 13 | 16 | mΩ |
| VGS=-4.5V, ID=-5A | --- | 18 | 26 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS, ID =-250uA | -1.4 | -1.9 | -2.4 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | 5.04 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=-32V, VGS=0V, TJ=25℃ | --- | --- | -1 | uA |
| VDS=-32V, VGS=0V, TJ=55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-10A | --- | 18 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V, VGS=-10V, ID=-11A | --- | 32 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.2 | --- | ||
| Qgd | Gate-Drain Charge | --- | 8 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-20V, VGS=-10V, RG=6Ω, ID=-1A,RL=20Ω | --- | 14 | --- | ns |
| Tr | Rise Time | --- | 12 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 41 | --- | ||
| Tf | Hierscht Zäit | --- | 22 | --- | ||
| Ciss | Input Kapazitéit | VDS=-15V, VGS=0V, f=1MHz | --- | 1500 | --- | pF |
| Coss | Output Kapazitéit | --- | 235 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 180 | --- |
