WSP4099 Dual P-Channel -40V -6.5A SOP-8 WINSOK MOSFET
Allgemeng Beschreiwung
De WSP4099 ass e mächtege Trench P-ch MOSFET mat enger héijer Zelldicht.Et liwwert exzellent RDSON a Gate Charge, sou datt et gëeegent ass fir déi meescht synchron Buck Konverter Uwendungen.Et entsprécht RoHS a GreenProduct Standarden an huet 100% EAS Garantie mat voller Funktioun Zouverlässegkeet Genehmegung.
Eegeschaften
Fortgeschratt Trench Technologie mat héijer Zell Dicht, ultra-niddereg Gate charge, excellent CdV / dt Effekt Zerfall an eng 100% EAS Garantie sinn all Fonctiounen vun eise gréngen Apparater déi einfach sinn.
Uwendungen
Héichfrequenz Point-of-Load Synchronous Buck Converter fir MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-Zigaretten, drahtlos Laden, Motoren, Dronen, medizinesch Versuergung, Autosladere, Controller, Digital Produkter , kleng Haushaltsapparater, a Konsumentelektronik.
entspriechend Material Zuel
ON FDS4685,VISHAY Si4447ADY,TOSHIBA TPC8227-H,PANJIT PJL9835A，Sinopower SM4405BSK,dintek DTM4807,ruichips RU40S4H.
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | -40 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@TC=25℃ | Kontinuéierlech Drain aktuell, -VGS @ -10V1 | -6,5 | A |
| ID@TC=100℃ | Kontinuéierlech Drain aktuell, -VGS @ -10V1 | -4.5 | A |
| IDM | Pulséiert Drain Stroum 2 | -22 | A |
| EAS | Single Pulse Avalanche Energy3 | 25 | mJ |
| IAS | Avalanche Aktuell | -10 | A |
| PD@TC=25℃ | Total Power Dissipation 4 | 2.0 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=-250uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = -1mA | --- | -0,02 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=-10V, ID=-6.5A | --- | 30 | 38 | mΩ |
| VGS=-4.5V, ID=-4.5A | --- | 46 | 62 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =-250uA | -1.5 | -2.0 | -2.5 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | 3.72 | --- | V/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=-32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-4A | --- | 8 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V, VGS=-4.5V, ID=-6.5A | --- | 7.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 3.5 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-15V, VGS=-10V, RG=6Ω, ID=-1A,RL=20Ω | --- | 8.7 | --- | ns |
| Tr | Rise Time | --- | 7 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 31 | --- | ||
| Tf | Hierscht Zäit | --- | 17 | --- | ||
| Ciss | Input Kapazitéit | VDS=-15V, VGS=0V, f=1MHz | --- | 668 | --- | pF |
| Coss | Output Kapazitéit | --- | 98 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 72 | --- |
