WSM320N04G N-Kanal 40V 320A TOLL-8L WINSOK MOSFET
Allgemeng Beschreiwung
De WSM320N04G ass en High-Performance MOSFET deen en Trench-Design benotzt an eng ganz héich Zelldicht huet. Et huet excellent RDSON a Gate charge an ass gëeegent fir déi meescht synchron Buck Converter Uwendungen. De WSM320N04G entsprécht RoHS a Green Product Ufuerderunge an ass garantéiert 100% EAS a voll Funktioun Zouverlässegkeet ze hunn.
Fonctiounen
Fortgeschratt héich Zell Dicht Trench Technologie, iwwerdeems och eng niddereg Gate charge fir optimal Leeschtung. Zousätzlech huet et en exzellente CdV / dt Effekt Réckgang, eng 100% EAS Garantie an eng ëmweltfrëndlech Optioun.
Uwendungen
Héichfrequenz Point-of-Load Synchron Buck Converter, Networking DC-DC Power System, Power Tool Applikatioun, Elektronesch Zigaretten, drahtlos Laden, Dronen, medizinesch, Autosladung, Controller, Digital Produkter, kleng Haushaltsapparater, a Konsumentelektronik.
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten | |
| VDS | Drain-Source Volt | 40 | V | |
| VGS | Gate-Source Volt | ± 20 | V | |
| ID@TC=25℃ | Kontinuéierlech Drain aktuell, VGS @ 10V1,7 | 320 | A | |
| ID@TC=100℃ | Kontinuéierlech Drain aktuell, VGS @ 10V1,7 | 192 | A | |
| IDM | Pulséiert Drain Stroum 2 | 900 | A | |
| EAS | Single Pulse Avalanche Energy3 | 980 | mJ | |
| IAS | Avalanche Aktuell | 70 | A | |
| PD@TC=25℃ | Total Power Dissipation 4 | 250 | W | |
| TSTG | Stockage Temperatur Beräich | -55 bis 175 | ℃ | |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 175 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=250uA | 40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = 1mA | --- | 0,050 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=10V, ID=25A | --- | 1.2 | 1.5 | mΩ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=4.5V, ID=20A | --- | 1.7 | 2.5 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =250uA | 1.2 | 1.7 | 2.6 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=40V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=40V, VGS=0V, TJ=55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=50A | --- | 160 | --- | S |
| Rg | Gate Resistenz | VDS=0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=20V, VGS=10V, ID=25A | --- | 130 | --- | nC |
| Qgs | Gate-Source Charge | --- | 43 | --- | ||
| Qgd | Gate-Drain Charge | --- | 83 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=20V, VGEN=4.5V, RG=2.7Ω, ID=1A. | --- | 30 | --- | ns |
| Tr | Rise Time | --- | 115 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 95 | --- | ||
| Tf | Hierscht Zäit | --- | 80 | --- | ||
| Ciss | Input Kapazitéit | VDS=20V, VGS=0V, f=1MHz | --- | 8 100h | --- | pF |
| Coss | Output Kapazitéit | --- | 1200 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 800 | --- |
