WSF70P02 P-Channel -20V -70A TO-252 WINSOK MOSFET
Allgemeng Beschreiwung
De WSF70P02 MOSFET ass den Top-Performance P-Kanal Trench-Apparat mat héijer Zelldicht. Et bitt aussergewéinlech RDSON a Gate Charge fir déi meescht synchron Buck Konverter Uwendungen. Den Apparat entsprécht de RoHS a Green Product Ufuerderunge, ass 100% EAS garantéiert, a gouf fir voll Funktioun Zouverlässegkeet guttgeheescht.
Fonctiounen
Fortgeschratt Trench Technologie mat héich Zell Dicht, super niddereg Gate charge, excellent Reduktioun vun CdV / dt Effekt, eng 100% EAS Garantie, an Optiounen fir ëmweltfrëndlech Apparater.
Uwendungen
Héichfrequenz Point-of-Load Synchron, Buck Converter fir MB/NB/UMPC/VGA, Networking DC-DC Power System, Load Switch, E-Zigaretten, drahtlos Laden, Motoren, Noutkraaftversuergung, Dronen, medizinesch Versuergung, Autoslader , Controller, digital Produkter, kleng Haushaltsapparater, Konsumentelektronik.
entspriechend Material Zuel
AOS
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten | |
| 10s | Steady Staat | |||
| VDS | Drain-Source Volt | -20 | V | |
| VGS | Gate-Source Volt | ± 12 | V | |
| ID@TC=25℃ | Kontinuéierlech Drain aktuell, VGS @ -10V1 | -70 | A | |
| ID@TC=100℃ | Kontinuéierlech Drain aktuell, VGS @ -10V1 | -36 | A | |
| IDM | Pulséiert Drain Stroum 2 | -200 | A | |
| EAS | Single Pulse Avalanche Energy3 | 360 | mJ | |
| IAS | Avalanche Aktuell | -55.4 | A | |
| PD@TC=25℃ | Total Power Dissipation 4 | 80 | W | |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ | |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | ℃ | |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=-250uA | -20 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = -1mA | --- | -0.018 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=-4.5V, ID=-15A | --- | 6.8 | 9,0 | mΩ |
| VGS=-2.5V, ID=-10A | --- | 8.2 | 11 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =-250uA | -0.4 | -0,6 | -1.2 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | 2,94 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=-20V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=-20V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±12V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, ID=-10A | --- | 45 | --- | S |
| Qg | Total Gate Charge (-4.5V) | VDS=-15V, VGS=-4,5V, ID=-10A | --- | 63 | --- | nC |
| Qgs | Gate-Source Charge | --- | 9.1 | --- | ||
| Qgd | Gate-Drain Charge | --- | 13 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-10V, VGS=-4,5V, RG=3.3Ω, ID=-10A | --- | 16 | --- | ns |
| Tr | Rise Time | --- | 77 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 195 | --- | ||
| Tf | Hierscht Zäit | --- | 186 | --- | ||
| Ciss | Input Kapazitéit | VDS=-10V, VGS=0V, f=1MHz | --- | 5783 | --- | pF |
| Coss | Output Kapazitéit | --- | 520 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 445 | --- |
