WSF6012 N&P-Kanal 60V/-60V 20A/-15A TO-252-4L WINSOK MOSFET
Allgemeng Beschreiwung
De WSF6012 MOSFET ass en High-Performance-Apparat mat engem Design mat héijer Zelldicht. Et bitt exzellent RDSON a Gate Charge gëeegent fir déi meescht Synchron Buck Converter Uwendungen. Zousätzlech entsprécht et RoHS a Green Product Ufuerderunge, a kënnt mat 100% EAS Garantie fir voll Funktionalitéit an Zouverlässegkeet.
Fonctiounen
Fortgeschratt Trench Technologie mat Héich Zell Dicht, Super Low Gate Charge, exzellent CDV / dt Effekt Réckgang, 100% EAS Garantie, an ëmweltfrëndlech Apparat Optiounen.
Uwendungen
Héichfrequenz Point-of-Load Synchronous Buck Converter, Networking DC-DC Power System, Load Switch, E-Zigaretten, drahtlos Laden, Motoren, Noutkraaftversuergung, Dronen, Gesondheetsariichtung, Autosladere, Controller, Digital Geräter, kleng Hausgeräter, a Konsumentelektronik.
entspriechend Material Zuel
AOS AOD603A,
Wichteg Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten | |
| N-Kanal | P-Kanal | |||
| VDS | Drain-Source Volt | 60 | -60 | V |
| VGS | Gate-Source Volt | ± 20 | ± 20 | V |
| ID@TC=25℃ | Kontinuéierlech Drain aktuell, VGS @ 10V1 | 20 | -15 | A |
| ID@TC=70℃ | Kontinuéierlech Drain aktuell, VGS @ 10V1 | 15 | -10 | A |
| IDM | Pulséiert Drain Stroum 2 | 46 | -36 | A |
| EAS | Single Pulse Avalanche Energy3 | 200 | 180 | mJ |
| IAS | Avalanche Aktuell | 59 | -50 | A |
| PD@TC=25℃ | Total Power Dissipation 4 | 34.7 | 34.7 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=250uA | 60 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID = 1mA | --- | 0,063 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistance2 | VGS=10V, ID=8A | --- | 28 | 37 | mΩ |
| VGS=4.5V, ID=5A | --- | 37 | 45 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =250uA | 1 | --- | 2.5 | V |
| △VGS(th) | VGS(th) Temperatur Koeffizient | --- | -5.24 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS=48V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=48V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20V, VDS=0V | --- | --- | ± 100 | nA |
| gfs | Forward Transconductance | VDS=5V, ID=8A | --- | 21 | --- | S |
| Rg | Gate Resistenz | VDS=0V, VGS=0V, f=1MHz | --- | 3.0 | 4.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS=48V, VGS=4.5V, ID=8A | --- | 12.6 | 20 | nC |
| Qgs | Gate-Source Charge | --- | 3.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.3 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=30V, VGS=4.5V, RG=3.3Ω, ID=1A | --- | 8 | --- | ns |
| Tr | Rise Time | --- | 14.2 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 24.6 | --- | ||
| Tf | Hierscht Zäit | --- | 4.6 | --- | ||
| Ciss | Input Kapazitéit | VDS=15V, VGS=0V, f=1MHz | --- | 670 | --- | pF |
| Coss | Output Kapazitéit | --- | 70 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 35 | --- |
