WSD80120DN56 N-Kanal 85V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD80120DN56 MOSFET ass 85V, de Stroum ass 120A, d'Resistenz ass 3.7mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
Medizinesch Volt MOSFET, fotografesch Ausrüstung MOSFET, Dronen MOSFET, industriell Kontroll MOSFET, 5G MOSFET, Automobilelektronik MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL13N8F7,STL135N8F7AG.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 85 | V |
| VGS | Gate-Source Spannung | ±25 | V |
| ID@TC= 25℃ | Continuous Drain Current, VGS@10V | 120 | A |
| ID@TC= 100℃ | Continuous Drain Current, VGS@10V | 96 | A |
| IDM | Pulséiert Drain aktuell..TC= 25°C | 384 | A |
| EAS | Avalanche Energie, Eenzelpuls, L=0,5mH | 320 | mJ |
| IAS | Lawinestroum, Eenzelpuls, L=0,5mH | 180 | A |
| PD@TC= 25℃ | Total Power Dissipatioun | 104 | W |
| PD@TC= 100℃ | Total Power Dissipatioun | 53 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 175 | ℃ |
| TJ | Operatioun Junction Temperaturbereich | 175 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 85 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,096 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz | VGS= 10V,ID= 50A | --- | 3.7 | 4.8 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -5.5 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 85V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| VDS= 85V, VGS=0V,TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±25 V, opDS= 0V | --- | --- | ±100 | nA |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 3.2 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS= 50V, VGS= 10V, echD= 10A | --- | 54 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17 | --- | ||
| Qgd | Gate-Drain Charge | --- | 11 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 50V, VGS= 10V, RG=1Ω,RL=1Ω,IDS=10A. | --- | 21 | --- | ns |
| Tr | Rise Time | --- | 18 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 36 | --- | ||
| Tf | Hierscht Zäit | --- | 10 | --- | ||
| Cass | Input Kapazitéit | VDS= 40V, VGS=0V, f=1MHz | --- | 3750 | --- | pF |
| Coss | Output Kapazitéit | --- | 395 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 180 | --- |
