WSD80100DN56 N-Kanal 80V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD80100DN56 MOSFET ass 80V, de Stroum ass 100A, d'Resistenz ass 6.1mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
Dronen MOSFET, Motoren MOSFET, Automobilelektronik MOSFET, grouss Apparater MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6276,AONS62814T.STMicroelectronics MOSFET STL1N8F7.POTENS Semiconductor MOSFET PDC7966X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 80 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| TJ | Maximal Kräizung Temperatur | 150 | °C |
| ID | Stockage Temperatur Beräich | -55 bis 150 | °C |
| ID | Continuous Drain Current, VGS= 10V,TC= 25°C | 100 | A |
| Continuous Drain Current, VGS= 10V,TC= 100°C | 80 | A | |
| IDM | Pulséiert Drain Stroum, TC= 25°C | 380 | A |
| PD | Maximal Power Dissipation, TC= 25°C | 200 | W |
| RqJC | Thermesch Resistenz-Kräizung zu Fall | 0.8 | °C |
| EAS | Avalanche Energie, Eenzelpuls, L=0,5mH | 800 | mJ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 80 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,043 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V , ID= 40A | --- | 6.1 | 8.5 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 48V, VGS=0V,TJ= 25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS=0V,TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, echD= 20A | 80 | --- | --- | S |
| Qg | Total Gate Charge (10V) | VDS= 30V, VGS= 10V, echD= 30A | --- | 125 | --- | nC |
| Qgs | Gate-Source Charge | --- | 24 | --- | ||
| Qgd | Gate-Drain Charge | --- | 30 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 30V, VGS= 10V, RG= 2,5Ω, echD=2A,RL=15Ω. | --- | 20 | --- | ns |
| Tr | Rise Time | --- | 19 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 70 | --- | ||
| Tf | Hierscht Zäit | --- | 30 | --- | ||
| Cass | Input Kapazitéit | VDS= 25V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Coss | Output Kapazitéit | --- | 410 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 315 | --- |
