WSD75100DN56 N-Kanal 75V 100A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD75100DN56 MOSFET ass 75V, de Stroum ass 100A, d'Resistenz ass 5.3mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
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WINSOK MOSFET entsprécht aner Mark Material Zuelen
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MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 75 | V |
| VGS | Gate-Source Spannung | ±25 | V |
| TJ | Maximal Kräizung Temperatur | 150 | °C |
| ID | Stockage Temperatur Beräich | -55 bis 150 | °C |
| IS | Diode Continuous Forward Current, TC= 25°C | 50 | A |
| ID | Continuous Drain Current, VGS= 10V,TC= 25°C | 100 | A |
| Continuous Drain Current, VGS= 10V,TC= 100°C | 73 | A | |
| IDM | Pulséiert Drain Stroum, TC= 25°C | 400 | A |
| PD | Maximal Power Dissipation, TC= 25°C | 155 | W |
| Maximal Power Dissipation, TC= 100°C | 62 | W | |
| RθJA | Thermesch Resistenz-Kräizung zu Ambient ,t =10s ̀ | 20 | °C |
| Thermesch Resistenz-Kräizung zu Ambient, Steady State | 60 | °C | |
| RqJC | Thermesch Resistenz-Kräizung zu Fall | 0.8 | °C |
| IAS | Lawinestroum, Eenzelpuls, L=0,5mH | 30 | A |
| EAS | Avalanche Energie, Eenzelpuls, L=0,5mH | 225 | mJ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 75 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,043 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V , ID= 25A | --- | 5.3 | 6.4 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 48V, VGS=0V,TJ= 25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS=0V,TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, echD= 20A | --- | 50 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | 2 | Ω |
| Qg | Total Gate Charge (10V) | VDS= 20V, VGS= 10V, echD= 40A | --- | 65 | 85 | nC |
| Qgs | Gate-Source Charge | --- | 20 | --- | ||
| Qgd | Gate-Drain Charge | --- | 17 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 30V, VGEN= 10V, RG=1Ω, echD=1A,RL=15Ω. | --- | 27 | 49 | ns |
| Tr | Rise Time | --- | 14 | 26 | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 60 | 108 | ||
| Tf | Hierscht Zäit | --- | 37 | 67 | ||
| Cass | Input Kapazitéit | VDS= 20V, VGS=0V, f=1MHz | 3450 | 3500 | 4550 | pF |
| Coss | Output Kapazitéit | 245 | 395 | 652 | ||
| Crss | Ëmgedréint Transfer Kapazitéit | 100 | 195 | 250 |
