WSD60N12GDN56 N-Kanal 120V 70A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD60N12GDN56 MOSFET ass 120V, de Stroum ass 70A, d'Resistenz ass 10mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
Medizinesch Ausrüstung MOSFET, Dronen MOSFET, PD Stroumversuergung MOSFET, LED Stroumversuergung MOSFET, industriell Ausrüstung MOSFET.
MOSFET Applikatioun FelderWINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PSMQC76N12LS1.POTENS Semiconductor MOSFET PDC974X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 120 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@TC= 25℃ | Kontinuéierlech Drain aktuell | 70 | A |
| IDP | Pulséiert Drain aktuell | 150 | A |
| EAS | Avalanche Energy, Single Puls | 53,8 | mJ |
| PD@TC= 25℃ | Total Power Dissipatioun | 140 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 120 | --- | --- | V |
| Statesch Drain-Source On-Resistenz | VGS=10V,ID=10A. | --- | 10 | 15 | mΩ | |
| RDS(ON) | VGS=4.5V, ID=10A. | --- | 18 | 25 | mΩ | |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.2 | --- | 2.5 | V |
| IDSS | Drain-Quell Leckaktuell | VDS= 80V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leckaktuell | VGS= ± 20V, VDS= 0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge (10V) | VDS= 50V, VGS= 10V, echD= 25A | --- | 33 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.6 | --- | ||
| Qgd | Gate-Drain Charge | --- | 7.2 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 50V, VGS= 10V, RG= 2Ω, echD= 25A | --- | 22 | --- | ns |
| Tr | Rise Time | --- | 10 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 85 | --- | ||
| Tf | Hierscht Zäit | --- | 112 | --- | ||
| Cass | Input Kapazitéit | VDS= 50V, VGS=0V, f=1MHz | --- | 2640 | --- | pF |
| Coss | Output Kapazitéit | --- | 330 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 11 | --- | ||
| IS | Kontinuéierlech Quell aktuell | VG=VD= 0V , Kraaftstroum | --- | --- | 50 | A |
| ISP | Pulséiert Quell aktuell | --- | --- | 150 | A | |
| VSD | Diode Forward Volt | VGS= 0V, echS= 12A, TJ= 25℃ | --- | --- | 1.3 | V |
| trr | Ëmgedréint Erhuelung Zäit | IF=25A,dI/dt=100A/µs,TJ= 25℃ | --- | 62 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 135 | --- | nC |
