WSD60N10GDN56 N-Kanal 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD60N10GDN56 MOSFET ass 100V, de Stroum ass 60A, d'Resistenz ass 8.5mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
E-Zigaretten MOSFET, Wireless Opluedstatiounen MOSFET, Motore MOSFET, Drohnen MOSFET, medezinesch Fleg MOSFET, Auto Opluedapparater MOSFET, controllers MOSFET, digital Produiten MOSFET, kleng Haushaltsapparater MOSFET, Konsument elektronesch MOSFET.
MOSFET Applikatioun FelderWINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.Onsemi,FAIRCHILD MOSFET NTMFS6B14N.VISHAY MOSFET SiR84DP,SiR87ADP.INFINEON,3PHRL H8R8ANH.PANJIT MOSFET PJQ5478A.NIKO-SEM MOSFET P81BKA.POTENS Semiconductor MOSFET PDC92X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 100 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@TC= 25℃ | Kontinuéierlech Drain aktuell | 60 | A |
| IDP | Pulséiert Drain aktuell | 210 | A |
| EAS | Avalanche Energy, Single Puls | 100 | mJ |
| PD@TC= 25℃ | Total Power Dissipatioun | 125 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 100 | --- | --- | V |
| Statesch Drain-Source On-Resistenz | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V, ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Quell Leckaktuell | VDS= 80V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leckaktuell | VGS= ± 20V, VDS= 0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge (10V) | VDS= 50V, VGS= 10V, echD= 25A | --- | 49,9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12.4 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A | --- | 20.6 | --- | ns |
| Tr | Rise Time | --- | 5 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 51,8 | --- | ||
| Tf | Hierscht Zäit | --- | 9 | --- | ||
| Cass | Input Kapazitéit | VDS= 50V, VGS=0V, f=1MHz | --- | 2604 | --- | pF |
| Coss | Output Kapazitéit | --- | 362 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 6.5 | --- | ||
| IS | Kontinuéierlech Quell aktuell | VG=VD= 0V , Kraaftstroum | --- | --- | 60 | A |
| ISP | Pulséiert Quell aktuell | --- | --- | 210 | A | |
| VSD | Diode Forward Volt | VGS= 0V, echS= 12A, TJ= 25℃ | --- | --- | 1.3 | V |
| trr | Ëmgedréint Erhuelung Zäit | IF=12A,dI/dt=100A/µs,TJ= 25℃ | --- | 60,4 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 106.1 | --- | nC |
