WSD60N10GDN56 N-Kanal 100V 60A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD60N10GDN56 MOSFET ass 100V, de Stroum ass 60A, d'Resistenz ass 8.5mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
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MOSFET Applikatioun FelderWINSOK MOSFET entsprécht aner Mark Material Zuelen
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MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 100 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@TC= 25℃ | Kontinuéierlech Drain aktuell | 60 | A |
| IDP | Pulséiert Drain aktuell | 210 | A |
| EAS | Avalanche Energy, Single Puls | 100 | mJ |
| PD@TC= 25℃ | Total Power Dissipatioun | 125 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 100 | --- | --- | V |
| Statesch Drain-Source On-Resistenz | VGS=10V,ID=10A. | --- | 8.5 | 10. 0 | mΩ | |
| RDS(ON) | VGS=4.5V, ID=10A. | --- | 9.5 | 12. 0 | mΩ | |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Quell Leckaktuell | VDS= 80V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| IGSS | Gate-Source Leckaktuell | VGS= ± 20V, VDS= 0V | --- | --- | ± 100 | nA |
| Qg | Total Gate Charge (10V) | VDS= 50V, VGS= 10V, echD= 25A | --- | 49,9 | --- | nC |
| Qgs | Gate-Source Charge | --- | 6.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12.4 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 50V, VGS= 10V,RG= 2.2Ω, ID= 25A | --- | 20.6 | --- | ns |
| Tr | Rise Time | --- | 5 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 51,8 | --- | ||
| Tf | Hierscht Zäit | --- | 9 | --- | ||
| Cass | Input Kapazitéit | VDS= 50V, VGS=0V, f=1MHz | --- | 2604 | --- | pF |
| Coss | Output Kapazitéit | --- | 362 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 6.5 | --- | ||
| IS | Kontinuéierlech Quell aktuell | VG=VD= 0V , Kraaftstroum | --- | --- | 60 | A |
| ISP | Pulséiert Quell aktuell | --- | --- | 210 | A | |
| VSD | Diode Forward Volt | VGS= 0V, echS=12A, TJ= 25℃ | --- | --- | 1.3 | V |
| trr | Ëmgedréint Erhuelung Zäit | IF=12A,dI/dt=100A/µs,TJ= 25℃ | --- | 60,4 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 106.1 | --- | nC |
