WSD6070DN56 N-Kanal 60V 80A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD6070DN56 MOSFET ass 60V, de Stroum ass 80A, d'Resistenz ass 7.3mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
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WINSOK MOSFET entsprécht aner Mark Material Zuelen
POTENS Semiconductor MOSFET PDC696X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 60 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| TJ | Maximal Kräizung Temperatur | 150 | °C |
| ID | Stockage Temperatur Beräich | -55 bis 150 | °C |
| IS | Diode Continuous Forward Current, TC= 25°C | 80 | A |
| ID | Continuous Drain Current, VGS= 10V,TC= 25°C | 80 | A |
| Continuous Drain Current, VGS= 10V,TC= 100°C | 66 | A | |
| IDM | Pulséiert Drain Stroum, TC= 25°C | 300 | A |
| PD | Maximal Power Dissipation, TC= 25°C | 150 | W |
| Maximal Power Dissipation, TC= 100°C | 75 | W | |
| RθJA | Thermesch Resistenz-Kräizung zu Ambient ,t =10s ̀ | 50 | °C/W |
| Thermesch Resistenz-Kräizung zu Ambient, Steady State | 62,5 | °C/W | |
| RqJC | Thermesch Resistenz-Kräizung zu Fall | 1 | °C/W |
| IAS | Lawinestroum, Eenzelpuls, L=0,5mH | 30 | A |
| EAS | Avalanche Energie, Eenzelpuls, L=0,5mH | 225 | mJ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 60 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,043 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V , ID= 40A | --- | 7.0 | 9,0 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 48V, VGS=0V,TJ= 25℃ | --- | --- | 2 | uA |
| VDS= 48V, VGS=0V,TJ= 55℃ | --- | --- | 10 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, echD= 20A | --- | 50 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS= 30V, VGS= 10V, echD= 40A | --- | 48 | --- | nC |
| Qgs | Gate-Source Charge | --- | 17 | --- | ||
| Qgd | Gate-Drain Charge | --- | 12 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 30V, VGEN= 10V, RG=1Ω, echD=1A,RL=15Ω. | --- | 16 | --- | ns |
| Tr | Rise Time | --- | 10 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 40 | --- | ||
| Tf | Hierscht Zäit | --- | 35 | --- | ||
| Cass | Input Kapazitéit | VDS= 30V, VGS=0V, f=1MHz | --- | 2680 | --- | pF |
| Coss | Output Kapazitéit | --- | 386 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 160 | --- |
