WSD45N10GDN56 N-Kanal 100V 45A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD45N10GDN56 MOSFET ass 100V, de Stroum ass 45A, d'Resistenz ass 14.5mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
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WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6226,AON6294,AON6298,AONS6292,AONS6692,AONS66923.PANJIT MOSFET PJQ5476AL.POTENS Semiconductor MOSFET PDC966X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 100 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| ID@TC= 25℃ | Continuous Drain Current, VGS@10V | 45 | A |
| ID@TC= 100℃ | Continuous Drain Current, VGS@10V | 33 | A |
| ID@TA= 25℃ | Continuous Drain Current, VGS@10V | 12 | A |
| ID@TA= 70℃ | Continuous Drain Current, VGS@10V | 9.6 | A |
| IDMa | Pulséiert Drain aktuell | 130 | A |
| EASb | Single Pulse Avalanche Energie | 169 | mJ |
| IASb | Avalanche Aktuell | 26 | A |
| PD@TC= 25℃ | Total Power Dissipatioun | 95 | W |
| PD@TA= 25℃ | Total Power Dissipatioun | 5.0 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 100 | --- | --- | V |
| △BVDS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,0 | --- | V/℃ |
| RDS(ON)d | Statesch Drain-Source On-Resistenz2 | VGS= 10V, echD= 26A | --- | 14.5 | 17.5 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 2.0 | 3.0 | 4.0 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -5 | mV/℃ | ||
| IDSS | Drain-Quell Leckaktuell | VDS= 80V, VGS=0V,TJ= 25℃ | --- | - | 1 | uA |
| VDS= 80V, VGS=0V,TJ= 55℃ | --- | - | 30 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | - | ±100 | nA |
| Rge | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qge | Total Gate Charge (10V) | VDS= 50V, VGS= 10V, echD= 26A | --- | 42 | 59 | nC |
| Qgse | Gate-Source Charge | --- | 12 | -- | ||
| Qgde | Gate-Drain Charge | --- | 12 | --- | ||
| Td (an)e | Turn-On Delay Time | VDD= 30V, VGEN= 10V, RG=6Ω ID=1A,RL=30Ω | --- | 19 | 35 | ns |
| Tre | Rise Time | --- | 9 | 17 | ||
| Td (aus)e | Ausschalten Verzögerungszäit | --- | 36 | 65 | ||
| Tfe | Hierscht Zäit | --- | 22 | 40 | ||
| Cisse | Input Kapazitéit | VDS= 30V, VGS=0V, f=1MHz | --- | 1800 | --- | pF |
| Koss | Output Kapazitéit | --- | 215 | --- | ||
| Crsse | Ëmgedréint Transfer Kapazitéit | --- | 42 | --- |
