WSD4280DN22 Dual P-Channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD4280DN22 MOSFET ass -15V, de Stroum ass -4.6A, d'Resistenz ass 47mΩ, de Kanal ass Dual P-Kanal, an de Package ass DFN2X2-6L.
WINSOK MOSFET Applikatioun Beräicher
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WINSOK MOSFET entsprécht aner Mark Material Zuelen
PANJIT MOSFET PJQ2815
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | -15 | V |
| VGS | Gate-Source Volt | ± 8 | V |
| ID@Tc= 25℃ | Continuous Drain Current, VGS= -4.5V1 | -4.6 | A |
| IDM | 300μS gepulste Drainstroum, (VGS= -4.5V) | -15 | A |
| PD | Power Dissipation Derating iwwer TA = 25°C (Note 2) | 1.9 | W |
| TSTG, TJ | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| RθJA | Thermal Resistance Junction-Ambiente1 | 65 | ℃/W |
| RθJC | Thermesch Resistenz Junction-Case1 | 50 | ℃/W |
Elektresch Charakteristiken (TJ = 25 ℃, wann net anescht uginn)
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= -250 uA | -15 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID= -1 mA | --- | -0,01 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=-4.5V, echD=-1A | --- | 47 | 61 | mΩ |
| VGS=-2.5V, echD=-1A | --- | 61 | 80 | |||
| VGS= -1.8V, echD=-1A | --- | 90 | 150 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= -250 uA | -0.4 | -0,62 | -1.2 | V |
| △ VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= -10V, VGS=0V,TJ= 25℃ | --- | --- | -1 | uA |
| VDS= -10V, VGS=0V,TJ= 55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leckaktuell | VGS= ± 12V, VDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=-5V, echD=-1A | --- | 10 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 2 | --- | Ω |
| Qg | Total Gate Charge (-4,5V) | VDS= -10V, VGS=-4.5V, echD= -4.6A | --- | 9.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.3 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-10V,VGS=-4.5V, RG= 1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Rise Time | --- | 16 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 30 | --- | ||
| Tf | Hierscht Zäit | --- | 10 | --- | ||
| Cass | Input Kapazitéit | VDS= -10V, VGS=0V, f=1MHz | --- | 781 | --- | pF |
| Coss | Output Kapazitéit | --- | 98 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 96 | --- |
