WSD4280DN22 Dual P-Channel -15V -4.6A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD4280DN22 MOSFET ass -15V, de Stroum ass -4.6A, d'Resistenz ass 47mΩ, de Kanal ass Dual P-Kanal, an de Package ass DFN2X2-6L.
WINSOK MOSFET Applikatioun Beräicher
Bidirektional Spärschalter; DC-DC Konversioun Uwendungen; Li-Batterie Opluedstatiounen; E-Zigarette MOSFET, drahtlose Opluedstatiounen MOSFET, Auto Opluedstatiounen MOSFET, Controller MOSFET, digital Produit MOSFET, kleng Haushaltsapparater MOSFET, Konsument elektronesch MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
PANJIT MOSFET PJQ2815
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | -15 | V |
| VGS | Gate-Source Volt | ± 8 | V |
| ID@Tc= 25℃ | Continuous Drain Current, VGS= -4.5V1 | -4.6 | A |
| IDM | 300μS gepulste Drainstroum, (VGS= -4.5V) | -15 | A |
| PD | Power Dissipation Derating iwwer TA = 25°C (Note 2) | 1.9 | W |
| TSTG, TJ | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| RθJA | Thermal Resistance Junction-Ambiente1 | 65 | ℃/W |
| RθJC | Thermesch Resistenz Kräizung-Case1 | 50 | ℃/W |
Elektresch Charakteristiken (TJ = 25 ℃, wann net anescht uginn)
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= -250 uA | -15 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID= -1 mA | --- | -0,01 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS= -4.5V, echD=-1A | --- | 47 | 61 | mΩ |
| VGS=-2,5V, ID=-1A | --- | 61 | 80 | |||
| VGS= -1.8V, echD=-1A | --- | 90 | 150 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= -250 uA | -0.4 | -0,62 | -1.2 | V |
| △ VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= -10V, VGS=0V,TJ= 25℃ | --- | --- | -1 | uA |
| VDS= -10V, VGS=0V,TJ= 55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leckaktuell | VGS= ± 12V, VDS= 0V | --- | --- | ± 100 | nA |
| gfs | Forward Transconductance | VDS=-5V, echD=-1A | --- | 10 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 2 | --- | Ω |
| Qg | Total Gate Charge (-4.5V) | VDS= -10V, VGS= -4.5V, echD= -4.6A | --- | 9.5 | --- | nC |
| Qgs | Gate-Source Charge | --- | 1.4 | --- | ||
| Qgd | Gate-Drain Charge | --- | 2.3 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-10V,VGS=-4.5V, RG= 1Ω ID=-3.9A, | --- | 15 | --- | ns |
| Tr | Rise Time | --- | 16 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 30 | --- | ||
| Tf | Hierscht Zäit | --- | 10 | --- | ||
| Cass | Input Kapazitéit | VDS= -10V, VGS=0V, f=1MHz | --- | 781 | --- | pF |
| Coss | Output Kapazitéit | --- | 98 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 96 | --- |
