WSD40200DN56G N-Kanal 40V 180A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD40120DN56G MOSFET ass 40V, de Stroum ass 120A, d'Resistenz ass 1.4mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
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WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6234,AON6232,AON623.STMicroelectronics MOSFET STL14N4F7AG.POTENS Semiconductor MOSFET PDC496X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 40 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| ID@TC= 25℃ | Continuous Drain Current, VGS@10V1 | 120 | A |
| ID@TC= 100℃ | Continuous Drain Current, VGS@10V1 | 82 | A |
| IDM | Pulséiert Drain aktuell2 | 400 | A |
| EAS | Single Pulse Avalanche Energie3 | 400 | mJ |
| IAS | Avalanche Aktuell | 40 | A |
| PD@TC= 25℃ | Total Power Dissipatioun4 | 125 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 40 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,043 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V , ID= 20A | --- | 1.4 | 1.8 | mΩ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=4.5V , ID= 20A | --- | 2.0 | 2.6 | mΩ |
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.2 | 1.6 | 2.2 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6,94 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 32V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| VDS= 32V, VGS=0V,TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, echD= 20A | --- | 53 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 1.0 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS= 15V, VGS= 10V, echD= 20A | --- | 45 | --- | nC |
| Qgs | Gate-Source Charge | --- | 12 | --- | ||
| Qgd | Gate-Drain Charge | --- | 18.5 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 15V, VGEN= 10V, RG= 3.3Ω, echD=20A,RL=15Ω. | --- | 18.5 | --- | ns |
| Tr | Rise Time | --- | 9 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 58,5 | --- | ||
| Tf | Hierscht Zäit | --- | 32 | --- | ||
| Cass | Input Kapazitéit | VDS= 20V, VGS=0V, f=1MHz | --- | 3972 | --- | pF |
| Coss | Output Kapazitéit | --- | 1119 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 82 | --- |
