WSD4018DN22 P-Kanal -40V -18A DFN2X2-6L WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD4018DN22 MOSFET ass -40V, de Stroum ass -18A, d'Resistenz ass 26mΩ, de Kanal ass P-Kanal, an de Package ass DFN2X2-6L.
WINSOK MOSFET Applikatioun Beräicher
Fortgeschratt héich Zell Dicht Trench Technologie, Super Low Gate Charge, Excellent Cdv / dt Effekt Réckgang Gréng Gerät Verfügbar, Gesiichtserkennungsausrüstung MOSFET, E-Zigarette MOSFET, kleng Haushaltsapparater MOSFET, Autolader MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON2409,POTENS MOSFET PDB3909L
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | -40 | V |
| VGS | Gate-Source Volt | ± 20 | V |
| ID@Tc= 25℃ | Continuous Drain Current, VGS@ -10V1 | -18 | A |
| ID@Tc= 70℃ | Continuous Drain Current, VGS@ -10V1 | -14.6 | A |
| IDM | 300μS Pulséiert Drain Stroum, VGS= -4.5V2 | 54 | A |
| PD@Tc= 25℃ | Total Power Dissipatioun3 | 19 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
Elektresch Charakteristiken (TJ = 25 ℃, wann net anescht uginn)
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= -250 uA | -40 | --- | --- | V |
| △BVDSS/△TJ | BVDSS Temperatur Koeffizient | Referenz op 25 ℃, ID= -1 mA | --- | -0,01 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS= -10V, echD= -8.0A | --- | 26 | 34 | mΩ |
| VGS= -4.5V, echD= -6.0A | --- | 31 | 42 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= -250uA | -1.0 | -1.5 | -3.0 | V |
| △ VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | 3.13 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= -40V, VGS=0V,TJ= 25℃ | --- | --- | -1 | uA |
| VDS= -40V, VGS=0V,TJ= 55℃ | --- | --- | -5 | |||
| IGSS | Gate-Source Leckaktuell | VGS= ± 20V, VDS= 0V | --- | --- | ±100 | nA |
| Qg | Total Gate Charge (-4.5V) | VDS=-20V, VGS= -10V, echD= -1.5A | --- | 27 | --- | nC |
| Qgs | Gate-Source Charge | --- | 2.5 | --- | ||
| Qgd | Gate-Drain Charge | --- | 6.7 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=-20V, VGS=-10V,RG=3Ω, RL=10Ω | --- | 9.8 | --- | ns |
| Tr | Rise Time | --- | 11 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 54 | --- | ||
| Tf | Hierscht Zäit | --- | 7.1 | --- | ||
| Cass | Input Kapazitéit | VDS=-20V, VGS=0V, f=1MHz | --- | 1560 | --- | pF |
| Coss | Output Kapazitéit | --- | 116 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 97 | --- |
