WSD40120DN56 N-Kanal 40V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD40120DN56 MOSFET ass 40V, de Stroum ass 120A, d'Resistenz ass 1.85mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
E-Zigaretten MOSFET, drahtlos Opluedstatiounen MOSFET, Dronen MOSFET, medezinesch Fleg MOSFET, Auto Opluedapparater MOSFET, controllers MOSFET, digital Produiten MOSFET, kleng Haushaltsapparater MOSFET, Konsument elektronesch MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6234,AON6232,AON623.Onsemi,FAIRCHILD MOSFET NVMFS5C442NL.VISHAY MOSFET SiRA52ADP,SiJA52ADP.STMicroelectronics MOSFET STL12N4LF6AG.NXP MOSFET.PH48.PJ MOSFET.PH48 Q544.NIKO-SEM MOSFET PKCSBB.POTENS Semiconductor MOSFET PDC496X.
MOSFET Parameteren
Symbol | Parameter | Bewäertung | Unitéiten |
VDS | Drain-Source Volt | 40 | V |
VGS | Gate-Source Spannung | ±20 | V |
ID@TC= 25℃ | Continuous Drain Current, VGS@10V1, 7 | 120 | A |
ID@TC= 100℃ | Continuous Drain Current, VGS@10V1, 7 | 100 | A |
IDM | Pulséiert Drain aktuell2 | 400 | A |
EAS | Single Pulse Avalanche Energie3 | 240 | mJ |
IAS | Avalanche Aktuell | 31 | A |
PD@TC= 25℃ | Total Power Dissipatioun4 | 104 | W |
TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | ℃ |
Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 40 | --- | --- | V |
△BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,043 | --- | V/℃ |
RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V , ID= 30A | --- | 1,85 | 2.4 | mΩ |
RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=4.5V , ID= 20A | --- | 2.5 | 3.3 | mΩ |
VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.5 | 1.8 | 2.5 | V |
△VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6,94 | --- | mV/℃ | |
IDSS | Drain-Quell Leckaktuell | VDS= 32V, VGS=0V,TJ= 25℃ | --- | --- | 2 | uA |
VDS= 32V, VGS=0V,TJ= 55℃ | --- | --- | 10 | |||
IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
gfs | Forward Transconductance | VDS= 5V, echD= 20A | --- | 55 | --- | S |
Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 1.1 | 2 | Ω |
Qg | Total Gate Charge (10V) | VDS= 20V, VGS= 10V, echD= 10A | --- | 76 | 91 | nC |
Qgs | Gate-Source Charge | --- | 12 | 14.4 | ||
Qgd | Gate-Drain Charge | --- | 15.5 | 18.6 | ||
Td (an) | Turn-On Delay Time | VDD= 30V, VGEN= 10V, RG=1Ω, echD=1A,RL=15Ω. | --- | 20 | 24 | ns |
Tr | Rise Time | --- | 10 | 12 | ||
Td (aus) | Ausschalten Verzögerungszäit | --- | 58 | 69 | ||
Tf | Hierscht Zäit | --- | 34 | 40 | ||
Cass | Input Kapazitéit | VDS= 20V, VGS=0V, f=1MHz | --- | 4350 | --- | pF |
Coss | Output Kapazitéit | --- | 690 | --- | ||
Crss | Ëmgedréit Transfer Kapazitéit | --- | 370 | --- |