WSD40110DN56G N-Channel 40V 110A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD4080DN56 MOSFET ass 40V, de Stroum ass 85A, d'Resistenz ass 4.5mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
Kleng Apparater MOSFET, Handheld Apparater MOSFET, Motore MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON623.STMicroelectronics MOSFET STL52DN4LF7AG,STL64DN4F7AG,STL64N4F7AG.PANJIT MOSFET PJQ5442.POTENS Semiconductor MOSFET PDC496X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 40 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| ID@TC= 25℃ | Continuous Drain Current, VGS @10V1 | 85 | A |
| ID@TC= 100 ℃ | Continuous Drain Current, VGS @10V1 | 58 | A |
| IDM | Pulséiert Drain aktuell2 | 100 | A |
| EAS | Single Pulse Avalanche Energie3 | 110,5 | mJ |
| IAS | Avalanche Aktuell | 47 | A |
| PD@TC= 25℃ | Total Power Dissipatioun4 | 52.1 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| RθJA | Thermal Resistenz Kräizung-Ambient1 | 62 | ℃/W |
| Rθ JC | Thermesch Resistenz Junction-Case1 | 2.4 | ℃/W |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V, ID=10A | --- | 4.5 | 6.5 | mΩ |
| VGS=4.5V, ID=5A | --- | 6.4 | 8.5 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =250uA | 1.0 | --- | 2.5 | V |
| IDSS | Drain-Quell Leckaktuell | VDS=32V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=32V, VGS=0V, TJ=55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20V, VDS=0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS=10V, ID=5A | --- | 27 | --- | S |
| Qg | Total Gate Charge (4.5V) | VDS=20V, VGS=4.5V, ID=10A | --- | 20 | --- | nC |
| Qgs | Gate-Source Charge | --- | 5.8 | --- | ||
| Qgd | Gate-Drain Charge | --- | 9.5 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=15V, VGS=10V RG=3.3Ω ID=1A | --- | 15.2 | --- | ns |
| Tr | Rise Time | --- | 8.8 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 74 | --- | ||
| Tf | Hierscht Zäit | --- | 7 | --- | ||
| Ciss | Input Kapazitéit | VDS=15V, VGS=0V, f=1MHz | --- | 2354 | --- | pF |
| Coss | Output Kapazitéit | --- | 215 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 175 | --- | ||
| IS | Kontinuéierlech Quell aktuell1, 5 | VG=VD= 0V , Kraaftstroum | --- | --- | 70 | A |
| VSD | Diode Forward Volt2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1 | V |
