WSD30350DN56G N-Channel 30V 350A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD30350DN56G MOSFET ass 30V, de Stroum ass 350A, d'Resistenz ass 1.8mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
E-Zigaretten MOSFET, drahtlos Opluedstatiounen MOSFET, Drohnen MOSFET, medezinesch Versuergung MOSFET, Auto Opluedapparater MOSFET, controllers MOSFET, digital Produiten MOSFET, kleng Haushaltsapparater MOSFET, Konsument elektronesch MOSFET.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 30 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| ID@TC= 25℃ | Kontinuéierlech Drain aktuell(D'Käschte vum Aktien Silicon Limited)1, 7 | 350 | A |
| ID@TC= 70℃ | Continuous Drain Current (Silicon Limited)1, 7 | 247 | A |
| IDM | Pulséiert Drain aktuell2 | 600 | A |
| EAS | Single Pulse Avalanche Energie3 | 1800 | mJ |
| IAS | Avalanche Aktuell | 100 | A |
| PD@TC= 25℃ | Total Power Dissipatioun4 | 104 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 30 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,022 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS= 10V, echD= 20A | --- | 0,48 | 0,62 | mΩ |
| VGS= 4,5V, echD= 20A | --- | 0,72 | 0,95 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.2 | 1.5 | 2.5 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 24V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| VDS= 24V, VGS=0V,TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, echD= 10A | --- | 40 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 3.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS= 15V, VGS= 4,5V, echD= 20A | --- | 89 | --- | nC |
| Qgs | Gate-Source Charge | --- | 37 | --- | ||
| Qgd | Gate-Drain Charge | --- | 20 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 15V, VGEN= 10V, RG=1Ω, echD= 10A | --- | 25 | --- | ns |
| Tr | Rise Time | --- | 34 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 61 | --- | ||
| Tf | Hierscht Zäit | --- | 18 | --- | ||
| Cass | Input Kapazitéit | VDS= 15V, VGS=0V, f=1MHz | --- | 7845 | --- | pF |
| Coss | Output Kapazitéit | --- | 4525 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 139 | --- |
