WSD30300DN56G N-Channel 30V 300A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD20100DN56 MOSFET ass 20V, de Stroum ass 90A, d'Resistenz ass 1.6mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
Elektronesch Zigaretten MOSFET, Dronen MOSFET, elektresch Tools MOSFET, fascia Waffen MOSFET, PD MOSFET, kleng Haushaltsapparater MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6572.
POTENS Semiconductor MOSFET PDC394X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 20 | V |
| VGS | Gate-Source Volt | ±12 | V |
| ID@TC= 25℃ | Kontinuéierlech Drain aktuell1 | 90 | A |
| ID@TC= 100 ℃ | Kontinuéierlech Drain aktuell1 | 48 | A |
| IDM | Pulséiert Drain aktuell2 | 270 | A |
| EAS | Single Pulse Avalanche Energie3 | 80 | mJ |
| IAS | Avalanche Aktuell | 40 | A |
| PD@TC= 25℃ | Total Power Dissipatioun4 | 83 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperaturbereich | -55 bis 150 | ℃ |
| RθJA | Thermal Resistance Junction-Ambiente1(t≦10S) | 20 | ℃/W |
| RθJA | Thermal Resistance Junction-Ambiente1(Steady State) | 55 | ℃/W |
| Rθ JC | Thermal Resistance Junction-Fall1 | 1.5 | ℃/W |
| Symbol | Parameter | Konditiounen | Min | Typ | Max | Eenheet |
| BVDS | Drain-Source Decompte Volt | VGS=0V, ID=250uA | 20 | 23 | --- | V |
| VGS (eng) | Gate Threshold Volt | VGS=VDS , ID =250uA | 0,5 | 0,68 | 1.0 | V |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=10V, ID=20A | --- | 1.6 | 2.0 | mΩ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=4.5V, ID=20A | 1.9 | 2.5 | mΩ | |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS=2.5V, ID=20A | --- | 2.8 | 3.8 | mΩ |
| IDSS | Drain-Quell Leckaktuell | VDS=16V, VGS=0V, TJ=25℃ | --- | --- | 1 | uA |
| VDS=16V, VGS=0V, TJ=125℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±10V, VDS=0V | --- | --- | ± 10 | uA |
| Rg | Gate Resistenz | VDS=0V, VGS=0V, f=1MHz | --- | 1.2 | --- | Ω |
| Qg | Total Gate Charge (10V) | VDS=15V, VGS=10V, ID=20A | --- | 77 | --- | nC |
| Qgs | Gate-Source Charge | --- | 8.7 | --- | ||
| Qgd | Gate-Drain Charge | --- | 14 | --- | ||
| Td (an) | Turn-On Delay Time | VDD=15V, VGS=10V, RG=3, ID = 20A | --- | 10.2 | --- | ns |
| Tr | Rise Time | --- | 11.7 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 56,4 | --- | ||
| Tf | Hierscht Zäit | --- | 16.2 | --- | ||
| Ciss | Input Kapazitéit | VDS=10V, VGS=0V, f=1MHz | --- | 4307 | --- | pF |
| Coss | Output Kapazitéit | --- | 501 | --- | ||
| Crss | Ëmgedréit Transfer Kapazitéit | --- | 321 | --- | ||
| IS | Kontinuéierlech Quell aktuell1, 5 | VG=VD= 0V , Kraaftstroum | --- | --- | 50 | A |
| VSD | Diode Forward Volt2 | VGS=0V, IS=1A, TJ=25℃ | --- | --- | 1.2 | V |
| trr | Ëmgedréint Erhuelung Zäit | IF=20A, di/dt=100A/µs, TJ= 25℃ | --- | 22 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | 72 | --- | nC |
