WSD30160DN56 N-Kanal 30V 120A DFN5X6-8 WINSOK MOSFET
WINSOK MOSFET Produit Iwwersiicht
D'Spannung vum WSD30160DN56 MOSFET ass 30V, de Stroum ass 120A, d'Resistenz ass 1.9mΩ, de Kanal ass N-Kanal, an de Package ass DFN5X6-8.
WINSOK MOSFET Applikatioun Beräicher
E-Zigaretten MOSFET, drahtlos Opluedstatiounen MOSFET, Drohnen MOSFET, medezinesch Versuergung MOSFET, Auto Opluedapparater MOSFET, controllers MOSFET, digital Produiten MOSFET, kleng Haushaltsapparater MOSFET, Konsument elektronesch MOSFET.
WINSOK MOSFET entsprécht aner Mark Material Zuelen
AOS MOSFET AON6382,AON6384,AON644A,AON6548.
Onsemi,FAIRCHILD MOSFET NTMFS4834N,NTMFS4C5N.
TOSHIBA MOSFET TPH2R93PL.
PANJIT MOSFET PJQ5426.
NIKO-SEM MOSFET PKE1BB.
POTENS Semiconductor MOSFET PDC392X.
MOSFET Parameteren
| Symbol | Parameter | Bewäertung | Unitéiten |
| VDS | Drain-Source Volt | 30 | V |
| VGS | Gate-Source Spannung | ±20 | V |
| ID@TC= 25℃ | Continuous Drain Current, VGS@10V1, 7 | 120 | A |
| ID@TC= 100℃ | Continuous Drain Current, VGS@10V1, 7 | 68 | A |
| IDM | Pulséiert Drain aktuell2 | 300 | A |
| EAS | Single Pulse Avalanche Energie3 | 128 | mJ |
| IAS | Avalanche Aktuell | 50 | A |
| PD@TC= 25℃ | Total Power Dissipatioun4 | 62,5 | W |
| TSTG | Stockage Temperatur Beräich | -55 bis 150 | ℃ |
| TJ | Operatioun Junction Temperatur Range | -55 bis 150 | ℃ |
| Symbol | Parameter | Konditiounen | Min. | Typ. | Max. | Eenheet |
| BVDSS | Drain-Source Decompte Volt | VGS= 0V, echD= 250 uA | 30 | --- | --- | V |
| △BVDS/△TJ | BVDSSTemperatur Koeffizient | Referenz op 25℃, echD= 1 mA | --- | 0,02 | --- | V/℃ |
| RDS(ON) | Statesch Drain-Source On-Resistenz2 | VGS= 10V, echD= 20A | --- | 1.9 | 2.5 | mΩ |
| VGS= 4,5V, echD= 15A | --- | 2.9 | 3.5 | |||
| VGS (eng) | Gate Threshold Volt | VGS=VDS, echD= 250 uA | 1.2 | 1.7 | 2.5 | V |
| △VGS (eng) | VGS (eng)Temperatur Koeffizient | --- | -6.1 | --- | mV/℃ | |
| IDSS | Drain-Quell Leckaktuell | VDS= 24V, VGS=0V,TJ= 25℃ | --- | --- | 1 | uA |
| VDS= 24V, VGS=0V,TJ= 55℃ | --- | --- | 5 | |||
| IGSS | Gate-Source Leckaktuell | VGS=±20 V, opDS= 0V | --- | --- | ±100 | nA |
| gfs | Forward Transconductance | VDS= 5V, echD= 10A | --- | 32 | --- | S |
| Rg | Gate Resistenz | VDS= 0V, VGS=0V, f=1MHz | --- | 0.8 | 1.5 | Ω |
| Qg | Total Gate Charge (4.5V) | VDS= 15V, VGS= 4,5V, echD= 20A | --- | 38 | --- | nC |
| Qgs | Gate-Source Charge | --- | 10 | --- | ||
| Qgd | Gate-Drain Charge | --- | 13 | --- | ||
| Td (an) | Turn-On Delay Time | VDD= 15V, VGEN= 10V, RG=6Ω, echD=1A, RL=15Ω. | --- | 25 | --- | ns |
| Tr | Rise Time | --- | 23 | --- | ||
| Td (aus) | Ausschalten Verzögerungszäit | --- | 95 | --- | ||
| Tf | Hierscht Zäit | --- | 40 | --- | ||
| Cass | Input Kapazitéit | VDS= 15V, VGS=0V, f=1MHz | --- | 4900 | --- | pF |
| Coss | Output Kapazitéit | --- | 1180 | --- | ||
| Crss | Ëmgedréint Transfer Kapazitéit | --- | 530 | --- |
